MT47H64M16HR-3 IT:HTR Micron Technology Inc, MT47H64M16HR-3 IT:HTR Datasheet - Page 12
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H64M16HR-3 IT:HTR
Manufacturer Part Number
MT47H64M16HR-3 IT:HTR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H64M16HR-3 IT:HTR
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Functional Block Diagrams
Figure 3: 256 Meg x 4 Functional Block Diagram
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
BA0–BA2
A0–A13,
RAS#
CAS#
ODT
WE#
CKE
CK#
CS#
CK
17
Address
register
registers
Mode
Control
logic
17
counter
Refresh
14
11
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is inter-
nally configured as a multibank DRAM.
3
14
address
Row-
MUX
2
14
control
Bank
logic
Column-
counter/
address
latch
decoder
address
Bank 0
row-
latch
and
Bank 1
Bank 2
Bank 3
Bank 4
9
2
16,384
Bank 5
Bank 6
Bank 7
DM mask logic
(16,384 x 512 x 16)
I/O gating
Sense amplifiers
Memory array
Column
decoder
8,192
(x16)
512
Bank 0
Bank 1
Bank 2
Bank 3
Bank 4
Bank 5
Bank 6
12
Bank 7
COL0, COL1
CK, CK#
16
16
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Read
latch
CK out
WRITE
drivers
CK in
FIFO
and
4
4
4
4
Data
COL0, COL1
Mask
4
16
1Gb: x4, x8, x16 DDR2 SDRAM
MUX
generator
1
1
1
4
4
4
4
1
DQS
registers
Input
Functional Block Diagrams
DATA
4
DQS, DQS#
1
1
1
4
4
4
4
1
2
CK, CK#
4
1
DRVRS
2
DLL
RCVRS
2007 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
V
ss
Q
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
V
dd
Q
DQ0–DQ3
DQS, DQS#
DM
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