HYB 39S128160CE-7.5 Infineon Technologies, HYB 39S128160CE-7.5 Datasheet - Page 49

• Manufacturer Part Number: HYB 39S128160CE-7.5
• Manufacturer: Infineon Technologies
• Type: SDRAMr

Specifications of HYB 39S128160CE-7.5

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

20. Full Page Burst Operation
20.2 Full Page Burst Write, CAS Latency = 3
INFINEON Technologies
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
CK3
T1
Command
T2
Bank A
Read
CAx
T3
Command
Command
T4
Activate
Activate
Bank B
Bank B
RBx
RBx
T5
Ax
T6
Ax 1 +
The burst counter wraps
from the highest order
page address back to zero
during this time interval.
T7
Ax+ Ax-
2
T8
2
Command
50
T9
Bank B
Read
Ax
CBx
1 -
T10
Ax
T11
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address.
Ax
1 + Bx
T12
T13
Bx 1 +
T14
128-MBit Synchronous DRAM
HYB39S128400/800/160CT(L)
Bx
Burst Stop
Command
+2 Bx
T15 T16
+
Burst Length = Full Page, CAS Latency = 3
3
Bx
Precharge
Command
Bank B
4 +
T17
Bx
5 +
t
T18 T19
RRD
Command
Activate
Bank B
RBy
RBy
T20
T21 T22
SPT03930