HYB 39S128160CE-7.5 Infineon Technologies, HYB 39S128160CE-7.5 Datasheet - Page 23

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HYB 39S128160CE-7.5

Manufacturer Part Number
HYB 39S128160CE-7.5
Description
Manufacturer
Infineon Technologies
Type
SDRAMr
Datasheet

Specifications of HYB 39S128160CE-7.5

Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
100mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
INFINEON Technologies
(Burst Length = 4, CAS latency = 3)
CLK
DQMx
Command
DQ’s
t
t
(Burst Length = 4, CAS latency = 2, 3)
CLK
Command
CAS
latency = 2
CAS
latency = 3
CK2
CK3
, DQ’s
, DQ’s
Read A
T0
T0
NOP
"H" or "L"
Read A
Read B
T1
T1
Minimum delay between the Read and Write
Commands = 4 + 1 = 5 cycles
T2
T2
NOP
DOUT A0 DOUT B0 DOUT B1 DOUT B2
NOP
T3
T3
NOP
DOUT A0 DOUT B0
NOP
24
DOUT A0
t
T4
DQZ
T4
NOP
NOP
Must be Hi-Z before
the Write Command
T5
T5
NOP
NOP
DOUT B1
128-MBit Synchronous DRAM
HYB39S128400/800/160CT(L)
Write B
T6
DIN B0
T6
DOUT B3
DOUT B2
NOP
Write latency
T7
T7
DIN B1
NOP
DOUT B3
NOP
t
DQW
T8
DIN B2
T8
NOP
NOP
of DQMx
SPT03787
SPT03713

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