HYB 39S128160CE-7.5 Infineon Technologies, HYB 39S128160CE-7.5 Datasheet - Page 22

• Manufacturer Part Number: HYB 39S128160CE-7.5
• Manufacturer: Infineon Technologies
• Type: SDRAMr

Specifications of HYB 39S128160CE-7.5

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

1. Bank Activate Command Cycle
2. Burst Read Operation
INFINEON Technologies
t
t
(Burst Length = 4, CAS latency = 2, 3)
CLK
Command
CAS
latency = 2
CAS
latency = 3
CK2
CK3
(CAS latency = 3)
CLK
Address
Command
, DQ’s
, DQ’s
Read A
T0
Row Addr.
T0
Activate
Bank B
Bank B
"H" or "L"
T1
NOP
T1
NOP
t
RCD
T2
DOUT A0
NOP
T
NOP
T3
DOUT A0 DOUT A1
NOP
DOUT A1
Col. Addr.
Precharge
Bank B
T
with Auto
Write B
23
t
T4
RC
DOUT A2
NOP
T5
DOUT A3
DOUT A2
NOP
128-MBit Synchronous DRAM
HYB39S128400/800/160CT(L)
Row Addr.
Activate
Bank A
Bank A
T
T6
DOUT A3
NOP
t
RRD
T
NOP
T7
NOP
Row Addr.
Activate
Bank B
Bank B
T
T8
NOP
SPT03712
SPT03784