HYB 39S128160CE-7.5 Infineon Technologies, HYB 39S128160CE-7.5 Datasheet - Page 48

• Manufacturer Part Number: HYB 39S128160CE-7.5
• Manufacturer: Infineon Technologies
• Type: SDRAMr

Specifications of HYB 39S128160CE-7.5

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

20. Full Page Burst Operation
20.1 Full Page Burst Read, CAS Latency = 2
INFINEON Technologies
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
Command
T1
CK2
Bank A
Read
CAx
T2
Command
Command
T3
Activate
Activate
Bank B
Bank B
RBx
RBx
Ax
T4
Ax
The burst counter wraps
page address back to zero
during this time interval.
from the highest order
+1 Ax+ 2 Ax
T5
T6
-
2 Ax 1
T7
-
Command
T8
Bank B
Read
CBx
Ax
T9
Full Page burst operation does not
bursting beginning with the starting address.
terminate when the burst length is satisfied;
the burst counter increments and continues
49
Ax+
T10
1
Bx
T11
Bx+1 Bx+2
T12
T13
Bx 3
+
T14
128-MBit Synchronous DRAM
HYB39S128400/800/160CT(L)
+ Bx 4
Burst Stop
Command
T15
Bx+
Burst Length = Full Page, CAS Latency = 2
T16 T17 T18 T19 T20 T21 T22
5
Bx
Precharge
Command
Bank B
6 +
t
RP
Command
Activate
Bank B
RBy
RBy
SPT03929