TWR-K53N512-KIT Freescale Semiconductor, TWR-K53N512-KIT Datasheet - Page 7

• Manufacturer Part Number: TWR-K53N512-KIT
• Description: TWR-K53N512 Dev Kit
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr
• Type: MCUr

Specifications of TWR-K53N512-KIT

• Kit Contents: TWR-K53N512 - 32bit MCU Module With MK53N512CMD100 & TWRPI-SLCD Daughter Card, DVD With IDE Software
• Mcu Supported Families: K50
• Kit Features: MK53N512CMD100 MAPBGA 144 Pins MCU, Tower
• Rohs Compliant: Yes
• Contents: Board
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: Tower System

4.2 FlexMemory
Freescale’s new FlexMemory technology provides an extremely versatile and powerful solution for designers seeking on-
chip EEPROM and/or additional program or data flash memory. As easy and as fast as SRAM, it requires no user or system
intervention to complete programming and erase functions when used as high endurance byte-write/byte-erase EEPROM.
EEPROM array size can also be configured for improved endurance to suit application requirements. FlexMemory can also
provide additional flash memory (FlexNVM) for data or program storage in parallel with the main program flash.
The key features of FlexMemory include:
4.2.1 Programmable Trade-Off
FlexMemory lets you fully configure the way FlexNVM and FlexRAM blocks are used to provide the best balance of
memory resources for their application.
The user can configure several parameters, including EEPROM size, endurance, write size, and the size of additional
program/data flash.
Freescale Semiconductor, Inc.
K51X
K52N
K53N
K53X
• Configurability for designer:
• EEPROM endurance of 10M write/erase cycles possible over full voltage and temperature range
• Seamless EEPROM read/write operations: simply write or read a memory address
• High-speed byte, 16-bit, and 32-bit write/erase operations to EEPROM
• Eliminates the costs associated with external EEPROM ICs, and the software headaches and resource (CPU/flash/
• Storage for large data tables or bootloader
• Read-while-write operation with main program flash memory
• Minimum write voltage 1.71V
RAM) impact of EEPROM emulation schemes
100
100
100
100
• EEPROM array size and number of write/erase cycles
• Program or data flash size
72
72
128
256
256
512
512
256
256
256
32
32
—
—
Memory
128
128
128
32
64
64
Table 2. K50 family summary (continued)
K50 Family Product Brief, Rev. 8, 5/2011
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2
2
4
4
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Features
+
+
+
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+
—
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+
—
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—
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+
+
—
—
—
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+
+
Package
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—
—
—
+
+
—
—
—
—
—
+
—
—
—
—
—
+
—
—
—
+
+
+
Features
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—
—
+
+
+
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