SPB11N60C3XT Infineon Technologies, SPB11N60C3XT Datasheet - Page 8

• Manufacturer Part Number: SPB11N60C3XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPB11N60C3XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.38Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Power Dissipation: 125W
• Lead Free Status / RoHS Status: Compliant

13 Forward characteristics of body diode
I
parameter: T j , t
15 Typ. switching time
t = f (R
par.: V
F
Rev. 2.6
= f (V
10
ns
10
10
10
350
250
200
150
100
A
50
-1
0
2
1
0
DS
0
G
0
SPP11N60C3
SD
), inductive load, T
=380V, V
)
0.4
10
0.8
p
20
= 10 µs
GS
1.2
T
T
T
T
30
=0/+13V, I
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
40
j
=125°C
2
50
D
=11 A
2.4
Ω
td(off)
td(on)
tr
tf
V
V
R
SD
G
70
3
Page 8
14 Typ. switching time
t = f (I
par.: V
16 Typ. drain current slope
di/dt = f(R
par.: V
A/µs
3000
2000
1500
1000
ns
500
70
60
55
50
45
40
35
30
25
20
15
10
D
5
0
0
DS
DS
0
0
), inductive load, T
=380V, V
=380V, V
G
), inductive load, T
20
tr
2
tf
40
4
di/dt(on)
GS
GS
=0/+13V, R
=0/+13V, I
60
td(on)
6
td(off)
j
=125°C
di/dt(off)
SPB11N60C3
80
j
8
= 125°C
2007-12-14
D
G
=11A
=6.8Ω
A
Ω
I
R
D
G
120
12