SPB11N60C3XT Infineon Technologies, SPB11N60C3XT Datasheet - Page 5

• Manufacturer Part Number: SPB11N60C3XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPB11N60C3XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.38Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Power Dissipation: 125W
• Lead Free Status / RoHS Status: Compliant

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
Rev. 2.6
= f ( V
10
10
= f (T
10
10
10
140
120
110
100
W
A
90
80
70
60
50
40
30
20
10
0
-1
-2
2
1
0
10
0
SPP11N60C3
0
DS
C
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
40
10
60
1
C
=25°C
80
100
10
2
120
°C
V
T
V
C
DS
160
10
3
Page 5
2 Power dissipation FullPAK
P
4 Safe operating area FullPAK
I
parameter: D = 0, T
D
tot
= f (V
10
10
= f (T
W
10
10
10
A
35
25
20
15
10
-1
-2
5
0
2
1
0
10
0
DS
0
C
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
40
10
60
C
1
= 25°C
80
100
SPB11N60C3
10
2007-12-14
2
120
°C
V
T
V
C
DS
160
10
3