SPB11N60C3XT Infineon Technologies, SPB11N60C3XT Datasheet - Page 11

• Manufacturer Part Number: SPB11N60C3XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPB11N60C3XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.38Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Power Dissipation: 125W
• Lead Free Status / RoHS Status: Compliant

25 Typ. C
E
Definition of diodes switching characteristics
Rev. 2.6
oss
µJ
=f(V
7.5
5.5
4.5
3.5
2.5
1.5
0.5
6
5
4
3
2
1
0
0
DS
oss
)
100
stored energy
200
300
400
V
V
DS
600
Page 11
SPB11N60C3
2007-12-14