SPB11N60C3XT Infineon Technologies, SPB11N60C3XT Datasheet - Page 4

• Manufacturer Part Number: SPB11N60C3XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPB11N60C3XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.38Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Power Dissipation: 125W
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
Rev. 2.6
th1
th2
th3
th4
th5
th6
0.015
0.056
0.197
0.216
0.083
0.03
SPB
P
tot
(t)
Value
T
j
C
th1
R
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Page 4
T
V
V
di
T
C
GS
R
j
F
=25°C
C
=25°C
=480V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
,
0.0001878
0.0007106
0.000988
0.002791
0.007285
0.063
E xternal H eatsink
SPB
min.
-
-
-
-
-
-
-
Value
Values
1200
typ.
400
41
1
6
-
-
SPB11N60C3
2007-12-14
max.
600
1.2
11
33
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs