NAND256W3A2BN6F NUMONYX, NAND256W3A2BN6F Datasheet - Page 42

• Manufacturer Part Number: NAND256W3A2BN6F
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6F

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

DC and AC parameters
Table 20.
1. ES = electronic signature.
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Symbol
t
t
t
T
t
t
t
t
t
T
t
ALLRL1
ALLRL2
WHBH1
t
t
t
t
t
t
t
t
t
t
t
t
BLBH1
BLBH2
BLBH3
BLBH4
CLLRL
WHBH
WHRL
WLWL
RHQZ
WHBL
BHRL
EHQZ
ELQV
RHRL
RLRH
RLQV
DZRL
RLRL
EHQX
RHQX
symbol
t
t
t
PROG
BERS
t
t
t
t
t
t
t
T
Alt.
t
WHR
t
t
t
t
RST
CLR
CHZ
CEA
REH
RHZ
t
REA
t
WB
WC
RR
RC
t
AR
RP
OH
IR
AC characteristics for operations
R
Address Latch Low to
Read Enable Low
Ready/Busy High to Read Enable Low
Ready/Busy Low to
Ready/Busy High
Write Enable High to
Ready/Busy High
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to
Read Enable Low
Read Enable High to Output Hi-Z
Chip Enable High or Read Enable High to Output Hold
Read Enable Low to Read
Enable High
Read Enable Low to Read
Enable Low
Read Enable Low to
Output Valid
Write Enable High to
Ready/Busy High
Write Enable High to Ready/Busy Low
Write Enable High to Read Enable Low
Write Enable Low to Write
Enable Low
Read electronic signature
Read cycle
Read busy time, 128-Mbit, 256-Mbit,
dual die
Program busy time
Erase busy time
Reset busy time, during ready
Reset busy time, during read
Reset busy time, during program
Reset busy time, during erase
Read Enable High hold time
Read Enable pulse width
Read cycle time
Read Enable access time
Read ES access time
Read busy time, 128-Mbit, 256-Mbit
dual die
Write cycle time
Parameter
(1)
(1)
NAND128-A, NAND256-A
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
3 V devices Unit
500
500
100
10
10
20
12
10
10
20
45
15
30
10
25
50
35
12
60
50
3
5
5
0
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns