NAND256W3A2BN6F NUMONYX, NAND256W3A2BN6F Datasheet - Page 28

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NAND256W3A2BN6F

Manufacturer Part Number
NAND256W3A2BN6F
Description
Manufacturer
NUMONYX
Datasheet

Specifications of NAND256W3A2BN6F

Cell Type
NAND
Density
256Mb
Access Time (max)
12us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
25b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
32M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

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Device operations
6.4
28/59
Copy back program
The copy back program operation copies the data stored in one page and reprogram it in
another page.
The copy back program operation does not require external memory and so the operation is
faster and more efficient because the reading and loading cycles are not required. The
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
If the copy back program operation fails an error is signalled in the status register. However,
as the standard external ECC cannot be used with the copy back operation bit error due to
charge loss cannot be detected. For this reason it is recommended to limit the number of
copy back operations on the same data and or to improve the performance of the ECC.
The copy back program operation requires the following three steps:
1.
2.
3.
After a copy back program operation, a partial-page program is not allowed in the target
page until the block has been erased. See
operation.
Table 10.
Figure 15. Copy back operation
RB
I/O
The source page must be read using the Read A command (one bus write cycle to
setup the command and then 4 bus write cycles to input the source page address).
This operation copies all 264 words/ 528 bytes from the page into the page buffer.
When the device returns to the ready state (Ready/Busy High), the second bus write
cycle of the command is given with the 4 bus cycles to input the target page address.
Refer to
pages.
Then the confirm command is issued to start the P/E/R controller.
Read
Code
00h
128 Mbits
256 Mbits
Density
Copy back program addresses
Table 10
Address Inputs
Source
(Read Busy time)
for the addresses that must be the same for the source and target
tBLBH1
Copy Back
8Ah
Code
Same address for source and target pages
Figure 15
Address Inputs
Target
for an example of the copy back
(Program Busy time)
tBLBH2
A23
A24
10h
NAND128-A, NAND256-A
Busy
Read Status Register
70h
SR0
ai07590b

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