NAND256W3A2BN6F NUMONYX, NAND256W3A2BN6F Datasheet - Page 40

• Manufacturer Part Number: NAND256W3A2BN6F
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6F

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

DC and AC parameters
40/59
Table 18.
1. Leakage currents double on stacked devices.
Symbol
I
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
(RB)
LI
OL
IH
IL
Operating current
(erase and program lockout)
DC characteristics
Output High voltage level
Standby current (CMOS)
Output Low voltage level
Output Low current (RB)
Output leakage current
Standby current (TTL)
Input leakage current
V
Input High voltage
Input Low voltage
DD
Parameter
supply voltage
Sequential
Program
Erase
read
(1)
E=V
V
Test conditions
IN
t
WP = 0 V/V
WP = 0 V/V
I
RLRL
OH
I
E = V
OL
V
= 0 to V
V
IL,
OL
V
E = V
OUT
= −400 µA
DD
= 2.1 mA
I
OUT
minimum
= 0.4 V
–
–
–
–
–
DD
= 0 to
max
IH
-0.2
= 0 mA
DD
,
DD
DD
max
−0.3
Min
2.0
2.4
–
–
–
–
–
–
–
–
–
–
8
–
NAND128-A, NAND256-A
Typ
10
10
10
10
20
10
–
–
–
–
–
–
–
–
–
V
DD
Max
100
±10
±10
0.8
0.4
1.7
20
20
20
50
1
2
-
+0.3
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V