NAND256W3A2BN6F NUMONYX, NAND256W3A2BN6F Datasheet - Page 26

• Manufacturer Part Number: NAND256W3A2BN6F
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6F

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

Device operations
Figure 12. Sequential row read operations
Figure 13. Sequential row read block diagrams
26/59
RB
I/O
Block
Block
Read B command, x8 devices
(1st half Page)
(1st half Page)
Command
Read A command, x8 devices
01h/ 50h
code
00h/
Area A
Area A
Address inputs
(Read busy time)
(2nd half Page)
(2nd half Page)
Area B
Area B
tBLBH1
(Spare)
(Spare)
Area C
Area C
Busy
1st page
1st page
2nd page
Nth page
2nd page
Nth page
page output
1st
tBLBH1
Block
Block
Busy
Read C command, x8/x16 devices
Read A command, x16 devices
Area A
page output
(main area)
2nd
tBLBH1
Area A
Area A/ B
Busy
NAND128-A, NAND256-A
(Spare)
Area C
(Spare)
Area C
page output
Nth
1st page
2nd page
Nth page
1st page
Nth page
2nd page
ai07597
AI07598