MT47H32M16HR-25E:F Micron Technology Inc, MT47H32M16HR-25E:F Datasheet - Page 106
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MT47H32M16HR-25E:F
Manufacturer Part Number
MT47H32M16HR-25E:F
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-25EF.pdf
(132 pages)
Specifications of MT47H32M16HR-25E:F
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
295mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M16HR-25E:F
Manufacturer:
ON
Quantity:
700
Part Number:
MT47H32M16HR-25E:F
Manufacturer:
MICRON
Quantity:
20 000
Figure 59: WRITE Interrupted by WRITE
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
DQS, DQS#
Command
Address
CK#
A10
DQ
CK
WRITE 1 a
Valid 5
T0
2-clock requirement
Notes:
NOP 2
T1
WL = 3
1. BL = 8 required and auto precharge must be disabled (A10 = LOW).
2. The NOP or COMMAND INHIBIT commands are valid. The PRECHARGE command cannot
3. The interrupting WRITE command must be issued exactly 2 ×
4. The earliest WRITE-to-PRECHARGE timing for WRITE at T0 is WL + BL/2 +
5. The WRITE command can be issued to any valid bank and row address (WRITE command
6. Auto precharge can be either enabled (A10 = HIGH) or disabled (A10 = LOW) by the in-
7. Subsequent rising DQS signals must align to the clock within
8. Example shown uses AL = 0; CL = 4, BL = 8.
be issued to banks used for WRITEs at T0 and T2.
starts with T7 and not T5 (because BL = 8 from MR and not the truncated length).
at T0 and T2 can be either same bank or different bank).
terrupting WRITE command.
WRITE 3 b
Valid 6
Valid 5
T2
NOP 2
T3
DI
a
WL = 3
a + 1
DI
NOP 2
a + 2
T4
7
DI
106
a + 3
DI
NOP 2
T5
DI
b
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
b + 1
512Mb: x4, x8, x16 DDR2 SDRAM
DI
NOP 2
b + 2
T6
DI
7
b + 3
DI
Valid 4
b + 4
T7
DI
7
Transitioning Data
© 2004 Micron Technology, Inc. All rights reserved.
t
t
b + 5
DQSS.
CK from previous WRITE.
DI
Valid 4
b + 6
T8
DI
7
b + 7
t
DI
WR where
Valid 4
Don’t Care
T9
WRITE
t
WR