MT48H4M16LFB4-75 IT:H Micron Technology Inc, MT48H4M16LFB4-75 IT:H Datasheet - Page 52

• Manufacturer Part Number: MT48H4M16LFB4-75 IT:H
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75 IT:H

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 39:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
BA0, BA1
DQM
CKE
CLK
A10
DQ
t CKS
t CMS
t AS
t AS
t AS
Single READ – Without Auto Precharge
ACTIVE
Row
Row
Bank
T0
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, the BL = 4, the CL = 2, and the READ burst is followed by a “manual” PRE-
2. A8, A9, and A11 = “Don’t Care.”
3. PRECHARGE command not allowed, or
Disable auto precharge
CHARGE.
t CMS
t CL
Column m
Bank
T2
READ
t CMH
t CH
2
CAS latency
T3
NOP
t
LZ
3
t AC
D
T4
NOP
OUT
t OH
52
t HZ
3
m
PRECHARGE
Single banks
Bank(S)
All banks
T5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t RP
RAS would be violated.
64Mb: 4 Meg x 16 Mobile SDRAM
T6
NOP
ACTIVE
Row
Bank
T7
Row
©2006 Micron Technology, Inc. All rights reserved.
Don’t Care
Undefined
Timing Diagrams
T8
NOP