MT48H4M16LFB4-75 IT:H Micron Technology Inc, MT48H4M16LFB4-75 IT:H Datasheet - Page 22

• Manufacturer Part Number: MT48H4M16LFB4-75 IT:H
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75 IT:H

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 12:
Figure 13:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
READ-to-WRITE
READ-to-WRITE with Extra Clock Cycle
Note:
Note:
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length bursts.
Command
Address
Command
A CL of three is used for illustration. The READ command may be issued to any bank, and
the WRITE command may be issued to any bank. If a burst of one is used, then DQM is not
required.
A CL of three is used for illustration. The READ command may be issued to any bank, and
the WRITE command may be issued to any bank.
DQM
Address
CLK
DQ
DQM
CLK
DQ
Bank,
Col n
T0
READ
T0
Bank,
Col n
READ
T1
Transitioning Data
NOP
T1
NOP
22
T2
Transitioning Data
NOP
T2
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T3
t HZ
D
OUT
NOP
D
t HZ
OUT
n
64Mb: 4 Meg x 16 Mobile SDRAM
t CK
n
Don’t Care
T4
NOP
T4
Bank,
Col b
WRITE
D
IN
b
t
Don’t Care
DS
T5
Bank,
Col b
WRITE
D
IN
b
t
DS
©2006 Micron Technology, Inc. All rights reserved.
Operations