MT48H4M16LFB4-75 IT:H Micron Technology Inc, MT48H4M16LFB4-75 IT:H Datasheet - Page 50

MT48H4M16LFB4-75 IT:H

Manufacturer Part Number
MT48H4M16LFB4-75 IT:H
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-75 IT:H

Organization
4Mx16
Density
64Mb
Address Bus
14b
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Figure 37:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
BA0, BA1
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
READ – Without Auto Precharge
Row
Row
Bank
T0
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, the BL = 4, the CL = 2, and the READ burst is followed by a “manual” PRE-
2. A8, A9, and A11 = “Don’t Care.”
Disable auto precharge
CHARGE.
t CMS
t CL
Column m
Bank
T2
READ
t CMH
t CH
2
CAS latency
T3
NOP
t LZ
t AC
T4
D
NOP
OUT
t OH
50
t AC
m
D
T5
OUT
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t OH
m +1
t AC
64Mb: 4 Meg x 16 Mobile SDRAM
Single banks
PRECHARGE
Bank(s)
All banks
D
T6
OUT
t OH
m +2
t RP
t AC
D
T7
NOP
OUT
t OH
m +3
t HZ
©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Bank
Row
ACTIVE
Row
T8
Undefined
Don’t Care

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