MT48LC2M32B2P-6:G Micron Technology Inc, MT48LC2M32B2P-6:G Datasheet - Page 66

• Manufacturer Part Number: MT48LC2M32B2P-6:G
• Description: IC, SDRAM, 64MBIT, 166MHZ, TSOP-86
• Manufacturer: Micron Technology Inc
• Type: SDRAMr
• Series: -r

Specifications of MT48LC2M32B2P-6:G

• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 17/7.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Memory Type: DRAM - Sychronous
• Access Time: 5.5ns
• Page Size: 64Mbit
• Memory Case Style: TSOP
• No. Of Pins: 86
• Operating Temperature Range: 0°C To +70°C
• Frequency: 166MHz
• Supply Voltage: 3.3V
• Format - Memory: RAM
• Memory Size: 64M (2Mx32)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Figure 51:
DQML, DQMH
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
COMMAND
A0–A9, A11
BA0, BA1
DQM /
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
Alternating Write Accesses
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
t CK
T1
NOP
1. For this example, BL = 4.
2. x16: A8, A9 and A11 = “Don’t Care”
ENABLE AUTO PRECHARGE
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t CMS
t CL
t DS
COLUMN m 2
BANK 0
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
BANK 1
ACTIVE
IN
T4
ROW
ROW
m + 2
t DH
66
t RCD - BANK 1
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR - BANK 0
ENABLE AUTO PRECHARGE
COLUMN b 2
t DS
BANK 1
WRITE
T6
D
IN
t DH
b
64Mb: x4, x8, x16 SDRAM
t DS
D
t RP - BANK 0
NOP
IN
T7
b + 1
t DH
©2000 Micron Technology, Inc. All rights reserved.
t DS
Timing Diagrams
D
IN
NOP
T8
b + 2
t DH
t DS
D
BANK 0
ACTIVE
T9
IN
ROW
ROW
b + 3
t
t
RCD - BANK 0
WR - BANK 1
t DH
DON’T CARE