STM8AF6246TDSSSX STMicroelectronics, STM8AF6246TDSSSX Datasheet - Page 61
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
STM8AF6246TDSSSX
Manufacturer Part Number
STM8AF6246TDSSSX
Description
8 BITS MICROCONTR
Manufacturer
STMicroelectronics
Series
STM8Ar
Datasheet
1.STM8AF5289TCY.pdf
(106 pages)
Specifications of STM8AF6246TDSSSX
Core Processor
STM8A
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 150°C
Package / Case
32-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8AF6246TDSSSX
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8AF6246TDSSSX
Manufacturer:
ST
Quantity:
20 000
STM8AF52/62xx, STM8AF51/61xx
10.3.1
10.3.2
Table 26.
1. Guaranteed by design, not tested in production.
2. If V
VCAP external capacitor
Stabilization for the main regulator is achieved connecting an external capacitor C
V
to less than 15 nH.
Figure 11. External capacitor C
1. Legend: ESR is the equivalent series resistance and ESL is the equivalent inductance.
Supply current characteristics
The current consumption is measured as described in
page
If not explicitly stated, general conditions of temperature and voltage apply.
CAP
V
Symbol
kept. The EEPROM programming sequence must not be initiated.
HYS(BOR)
t
t
TEMP
V
V
VDD
58.
pin. C
DD
IT+
IT-
is below 3 V, the code execution is guaranteed above the V
EXT
Operating conditions at power-up/power-down
V
V
Reset release delay
Reset generation delay
Power-on reset
threshold
Brown-out reset
threshold
Brown-out reset
hysteresis
DD
DD
is specified in
rise time rate
fall time rate
Parameter
(2)
ESR
Table
Doc ID 14395 Rev 8
EXT
25. Care should be taken to limit the series inductance
Conditions
V
V
DD
DD
Rleak
C
—
—
—
—
—
falling
rising
Figure 8 on page 57
2.65
2.58
Min
2
2
IT-
—
—
—
(1)
(1)
and V
IT+
Electrical characteristics
thresholds. RAM content is
70
2.73
Typ
2.8
—
—
3
3
ESL
(1)
and
Max
2.95
2.88
—
—
Figure 9 on
EXT
to the
61/106
Unit
µs/V
mV
ms
µs
V