PIC18LF13K22-E/ML Microchip Technology, PIC18LF13K22-E/ML Datasheet - Page 128
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PIC18LF13K22-E/ML
Manufacturer Part Number
PIC18LF13K22-E/ML
Description
8KB Flash, 256bytes RAM, 256bytes EEPROM, 16MIPS, NanoWatt XLP 20 QFN 4x4mm TUBE
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.PIC18LF13K22-ISS.pdf
(388 pages)
2.PIC18LF13K22-ISS.pdf
(12 pages)
3.PIC18LF13K22-ISS.pdf
(36 pages)
Specifications of PIC18LF13K22-E/ML
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
17
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-VQFN Exposed Pad, 20-HVQFN, 20-SQFN, 20-DHVQFN
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
32 KHz
Number Of Programmable I/os
18
Number Of Timers
4
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
A/d Bit Size
10 bit
A/d Channels Available
12
Height
0.88 mm
Length
4 mm
Supply Voltage (max)
3.6 V
Supply Voltage (min)
1.8 V, 2.7 V
Width
4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PIC18F1XK22/LF1XK22
13.4.6
In Half-Bridge applications where all power switches
are modulated at the PWM frequency, the power
switches normally require more time to turn off than to
turn on. If both the upper and lower power switches are
switched at the same time (one turned on, and the
other turned off), both switches may be on for a short
period of time until one switch completely turns off.
During this brief interval, a very high current
(shoot-through current) will flow through both power
switches, shorting the bridge supply. To avoid this
potentially destructive shoot-through current from
flowing during switching, turning on either of the power
switches is normally delayed to allow the other switch
to completely turn off.
In Half-Bridge mode, a digitally programmable
dead-band delay is available to avoid shoot-through
current from destroying the bridge power switches. The
delay occurs at the signal transition from the non-active
state to the active state. See Figure 13-14 for
illustration. The lower seven bits of the associated
PWM1CON register (Register 13-3) sets the delay
period in terms of microcontroller instruction cycles
(T
FIGURE 13-15:
DS41365D-page 128
CY
Standard Half-Bridge Circuit (“Push-Pull”)
or 4 T
OSC
PROGRAMMABLE DEAD-BAND
DELAY MODE
).
EXAMPLE OF HALF-BRIDGE APPLICATIONS
P1A
P1B
Preliminary
FET
Driver
FET
Driver
FIGURE 13-14:
P1A
P1B
td = Dead-Band Delay
Note 1: At this time, the TMR2 register is equal to the
(2)
(2)
V+
V-
(1)
2: Output signals are shown as active-high.
td
Pulse Width
PR2 register.
Load
Period
td
EXAMPLE OF
HALF-BRIDGE PWM
OUTPUT
2010 Microchip Technology Inc.
+
V
-
+
V
-
(1)
Period
(1)
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