FJV4107RMTF Fairchild Semiconductor, FJV4107RMTF Datasheet - Page 2

• Manufacturer Part Number: FJV4107RMTF
• Description: TRANSISTOR PNP 50V 100MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FJV4107RMTF

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1000
100
-10k
-100
10
-1k
-10
-1
1
-0.1
-0.1
-0.3
Figure 3. Input Off Voltage
Figure 1. DC current Gain
-0.5
I
C
V
[mA], COLLECTOR CURRENT
I
(off)[V], INPUT OFF VOLTAGE
-0.7
-1
-0.9
-1.1
-1.3
-10
-1.5
-1.7
V
R
R
V
R
R
CE
1
2
CE
1
2
= 22K
= 47K
= 22K
= 47K
= - 5V
= - 5V
-1.9
-100
-2.1
-100
-0.1
-10
400
350
300
250
200
150
100
50
-1
-0.1
0
0
Figure 2. Input On Voltage
25
Figure 4. Power Derating
I
C
T
[mA], COLLECTOR CURRENT
a
[
50
o
C], AMBIENT TEMPERATURE
-1
75
100
-10
125
V
R
R
CE
1
2
= 22K
= 47K
150
=- 0.3V
Rev. A, August 2002
-100
175