FJN3309RTA Fairchild Semiconductor, FJN3309RTA Datasheet

TRANSISTOR NPN 40V 100MA TO-92

FJN3309RTA

Manufacturer Part Number
FJN3309RTA
Description
TRANSISTOR NPN 40V 100MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJN3309RTA

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7K )
• Complement to FJN4309R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
C
f
R
C
CBO
T
Symbol
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Parameter
Parameter
(Bias Resistor Built In)
T
a
=25 C unless otherwise noted
T
a
=25 C unless otherwise noted
FJN3309R
I
I
V
V
I
V
f=1MHz
V
C
E
C
-55 ~ 150
CB
CE
CB
CE
=1mA, I
=100 A, I
=10mA, I
Value
100
300
150
=30V, I
=5V, I
=10V, I
=10V, I
40
40
5
Test Condition
B
C
=0
E
B
E
C
=1mA
E
=0
=1mA
=0
=5mA
=0
Units
mW
mA
V
V
V
C
C
1. Emitter 2. Collector 3. Base
1
Min.
100
3.2
40
40
B
Equivalent Circuit
Typ.
3.70
250
4.7
TO-92
R
Max.
600
0.1
0.3
6.2
Rev. A, August 2002
C
E
Units
MHz
K
pF
V
V
V
A

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FJN3309RTA Summary of contents

Page 1

... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE C Output Capacitance ob f Current Gain Bandwidth Product T R Input Resistor ©2002 Fairchild Semiconductor Corporation FJN3309R (Bias Resistor Built In) T =25 C unless otherwise noted a Value 100 300 150 -55 ~ 150 T =25 C unless otherwise noted ...

Page 2

... I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 400 350 300 250 200 150 100 100 C], AMBIENT TEMPERATURE a Figure 3. Power Derating ©2002 Fairchild Semiconductor Corporation 1000 4.7K 100 100 Figure 2. Collector-Emitter Saturation Voltage 125 150 175 I = 10I 4.7K 10 100 I [mA], COLLECTOR CURRENT C Rev ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, August 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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