FJV4101RMTF Fairchild Semiconductor, FJV4101RMTF Datasheet - Page 2

• Manufacturer Part Number: FJV4101RMTF
• Description: TRANSISTOR PNP 50V 100MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of FJV4101RMTF

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
-1000
-100
1000
-10
100
10
-0.0
-1
Figure 3. Input Off Voltage
-0.4
Figure 1. DC current Gain
I
V
C
[mA], COLLECTOR CURRENT
I
(off)[V], INPUT OFF VOLTAGE
-0.8
-10
-1.2
-100
-1.6
V
R
R
V
R
R
-2.0
CE
1
2
CE
1
2
= 4.7 K
= 4.7 K
= 4.7K
= 4.7K
= - 5V
= - 5V
-1000
-2.4
-100
-0.1
-10
-1
280
240
200
160
120
-0.1
80
40
0
0
25
Figure 2. Input On Voltage
Figure 4. Power Derating
I
C
[mA], COLLECTOR CURRENT
T
a
[
50
o
C], AMBIENT TEMPERATURE
-1
75
100
-10
125
V
R
R
CE
1
2
= 4.7 K
= 4.7 K
150
=- 0.3V
Rev. A, July 2002
-100
175