FJY3014R Fairchild Semiconductor, FJY3014R Datasheet - Page 13

• Manufacturer Part Number: FJY3014R
• Description: TRANS NPN 50V 100MA SOT-523F
• Manufacturer: Fairchild Semiconductor

Specifications of FJY3014R

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3, SOT-523F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FJY3014RTR

Schottky Diodes, Con’t.
Products
SOT-23, Con’t.
BAT54C
BAT54S
FYV0203DN
FYV0203DS
FYV0203S
FYV0704S
SOT-323
BAT54CWT1G
BAT54SWT1G
TO-220
FYP1004DN
FYP1010DN
FYP1045DN
FYP1504DN
FYP1545DN
FYP2004DN
FYP2006DN
FYP2010DN
FYP2045DN
MBRP1545N
MBRP2045N
MBRP3010N
MBRP3045N
MBRP745
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Schottky diode
Schottky diode
Schottky diode
Schottky diode
Schottky diode
Schottky diode
Schottky diode
Function
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Configuration
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual & common
dual Series
dual Series
dual Series
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
cathode
Single
Single
Single
I
100
100
100
150
00
150
150
150
150
50
00
150
(A)
0.6
0.6
0.6
0.6
0.6
0.6
0.6
80
80
FSM
8
R
Resistance
Thermal
��
JA
430
430
430
430
430
50
430
430
(°C/W)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Maximum
Repetitive
Reverse
Voltage
V
.0mm 3 1.5mm 3 0.95mm (Refer to p. 73 for detailed package drawing)
100
100
100
(V)
30
30
30
30
30
40
30
30
40
45
40
45
40
60
45
45
45
45
45
RRM
Forward
Average
Rectified
Current
I
0.75
F (AV)
(A)
0.3
0.3
0.
0.
0.
0.
0.
7.5
10
10
10
15
15
0
0
0
0
15
0
30
30
Instantaneous
(Refer to p. 79 for detailed package drawing)
Voltage (V)
Maximum
Forward
0.48
0.55
0.75
0.55
0.55
0.55
0.55
0.58
0.77
0.55
1.05
0.65
V
0.8
0.8
0.8
0.8
0.8
1
1
1
1
1
FM
www.fairchildsemi.com
Small Signal
Transistors & Diodes
Selection Guide
(µA)
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Instantaneous
100
100







Maximum
I
RM
@ V
100
100
100
5
5
30
30
30
40
5
5
40
45
40
45
40
60
45
45
45
45
45
R
(V)
13