BUT12AX,127 NXP Semiconductors, BUT12AX,127 Datasheet - Page 9

• Manufacturer Part Number: BUT12AX,127
• Description: TRANS NPN 1000V 8A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BUT12AX,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 1A, 5V
• Power - Max: 23W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934057858127; BUT12AX; BUT12AX

Philips Semiconductors
8. Package outline
Fig 15. SOT186A (TO-220F).
9397 750 13442
Product data
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT186A
4.6
4.0
A
2.9
2.5
A 1
0.9
0.7
b
2.5
1.1
0.9
0.8 max. depth
b 1
IEC
D
L
D 1
L 2
1.4
1.0
b 2
b 1
b 2
0.7
0.4
c
1
3-lead TO-220F
15.8
15.2
2
e
JEDEC
D
e 1
E
P
b
3
6.5
6.3
D 1
REFERENCES
Rev. 01 — 16 June 2004
10.3
9.7
E
0
w
L 1
T
2.54
M
e
JEITA
scale
q
5
5.08
e 1
10 mm
2.7
1.7
j
0.6
0.4
K
mounting
base
14.4
13.5
L
j
K
3.30
2.79
L 1
Silicon diffused power transistor
A 1
Q
A
max.
L 2
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
3
(1)
c
3.2
3.0
P
2.6
2.3
Q
BUT12AX
3.0
2.6
q
ISSUE DATE
02-03-12
02-04-09
T
2.5
(2)
SOT186A
0.4
w
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