BUT12AX,127 NXP Semiconductors, BUT12AX,127 Datasheet - Page 5

• Manufacturer Part Number: BUT12AX,127
• Description: TRANS NPN 1000V 8A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BUT12AX,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 1A, 5V
• Power - Max: 23W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934057858127; BUT12AX; BUT12AX

Philips Semiconductors
9397 750 13442
Product data
Fig 4. Base-emitter saturation voltage as a function of
Fig 6. Base-emitter voltage as a function of base
V BEsat
T
V BE
T
(V)
(V)
j
j
1.4
1.2
0.8
= 25 C and 100 C
1.0
= 25 C
1.0
2.0
0.5
1.5
collector current; typical values.
current; typical values.
0
10
0
1
T j = 25 ˚C
I C = 8 A
T j = 100 ˚C
1
1
6 A
3 A
2
10
I C (A)
I B (A)
003aaa458
003aaa456
10
3
Rev. 01 — 16 June 2004
2
Fig 5. Collector-emitter saturation voltage as a
Fig 7. Collector-emitter saturation voltage as a
V CEsat
V CEsat
T
(V)
(V)
10
j
10
1.5
0.5
= 25 C and 100 C
2.0
1.0
-1
1
0
function of collector current; typical values.
function base current; typical and maximum
values.
10
10
-1
I C = 3 A
1
Silicon diffused power transistor
1
6 A
T j = 100 ˚C
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
8 A
max
typ
T j = 25 ˚C
10
BUT12AX
I B (A)
I C (A)
003aaa457
003aaa459
10
10
2
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