BUT12AX,127 NXP Semiconductors, BUT12AX,127 Datasheet

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BUT12AX,127

Manufacturer Part Number
BUT12AX,127
Description
TRANS NPN 1000V 8A TO-220F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUT12AX,127

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1A, 5A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 1A, 5V
Power - Max
23W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
934057858127
BUT12AX
BUT12AX
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT186A (TO-220F), simplified outline and symbol
M3D308
Description
base (b)
collector (c)
emitter (e)
mounting base;
isolated
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
High voltage, high speed, NPN power transistor in a plastic package.
BUT12AX
Silicon diffused power transistor
Rev. 01 — 16 June 2004
Isolated package
Inverters
Motor control systems
V
P
CESM
tot
23 W
1000 V
Simplified outline
SOT186A (TO-220F)
mb
1
2 3
MBK110
Symbol
Fast switching.
Switching regulators
DC-to-DC converters.
I
t
C
f
0.8 s.
8 A
MBB008
1
3
2
Product data

Related parts for BUT12AX,127

BUT12AX,127 Summary of contents

Page 1

M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol Pin Description ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name BUT12AX TO-220F 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V peak collector-emitter voltage CESM V ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot ---------------------- - P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of heatsink temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to heatsink th(j-h) R thermal resistance from junction to ambient th(j-a) [1] External heatsink connected to mounting base. 6. Characteristics Table 5: Characteristics T ...

Page 5

Philips Semiconductors 2.0 V BEsat (V) 1.5 1 ˚ 100 ˚C 0 and 100 C j Fig 4. Base-emitter saturation voltage as a function of ...

Page 6

Philips Semiconductors and Fig 8. DC current gain as a function of collector current; typical values. 9397 750 13442 Product data ...

Page 7

Philips Semiconductors L 300 Fig 9. Test circuit for collector-emitter sustaining voltage 250 ...

Page 8

Philips Semiconductors 1000 200 Fig 13. Test ...

Page 9

Philips Semiconductors 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack DIMENSIONS (mm are the original dimensions UNIT ...

Page 10

Philips Semiconductors 9. Revision history Table 7: Revision history Rev Date CPCN Description 01 20040616 - Product data (9397 750 13442) 9397 750 13442 Product data Rev. 01 — 16 June 2004 BUT12AX Silicon diffused power transistor © Koninklijke Philips ...

Page 11

Philips Semiconductors Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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