BUT12AX,127 NXP Semiconductors, BUT12AX,127 Datasheet - Page 8

• Manufacturer Part Number: BUT12AX,127
• Description: TRANS NPN 1000V 8A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BUT12AX,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 1A, 5V
• Power - Max: 23W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934057858127; BUT12AX; BUT12AX

Philips Semiconductors
7. Isolation characteristics
Table 6:
9397 750 13442
Product data
Symbol
V
C
Fig 13. Test circuit for inductive load switching and
isol(RMS)M
c-h
V
L
B
CL
= 1 H; L
reverse bias safe operating area.
1000 V; V
V BE
Isolation characteristics
I B
Parameter
Peak RMS isolation voltage from all
three terminals to external heatsink.
Capacitance from collector to external
heatsink.
C
= 200 H
CC
= 30 V; V
L B
BE
L C
= 1 V to 5 V;
V CC
D.U.T.
003aaa465
V CL
Rev. 01 — 16 June 2004
Conditions
f = 50 to 60 Hz; sinusoidal waveform;
RH
65%; clean and dust-free.
Fig 14. Switching time waveforms with inductive load.
I B
I C
90%
90%
10%
10%
t r
Silicon diffused power transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min.
-
-
t s
t off
BUT12AX
I Bon
t f
Typ.
-
12
003aa466
I Con
I Boff
Max. Unit
2500 V
-
t
t
8 of 12
pF