BUT12AX,127 NXP Semiconductors, BUT12AX,127 Datasheet - Page 3

• Manufacturer Part Number: BUT12AX,127
• Description: TRANS NPN 1000V 8A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BUT12AX,127

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 5A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 1A, 5V
• Power - Max: 23W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 934057858127; BUT12AX; BUT12AX

Philips Semiconductors
9397 750 13442
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Forward bias safe operating area; continuous and peak collector currents as a function of
T
1 - Region of permissible DC operation.
2 - Permissible extension for repetitive operation.
P
P
(%)
(A)
I C
120
h
der
10
der
10
80
40
10
= 25 C
10
0
function of heatsink temperature.
collector-emitter voltage.
1
2
2
0
1
=
1
---------------------- -
P
tot 25 C
P
tot
50
I CM
I C
100%
100
150
03aa13
T
h
10
( C)
200
Rev. 01 — 16 June 2004
1
2
Fig 2. Reverse bias safe operating area; continuous
V
(A)
I C
BE
10
8
6
2
4
0
collector current as a function of
collector-emitter voltage.
= 1 V to 5 V; T
0
10
2
Silicon diffused power transistor
400
h
= 100 C.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
800
V CE (V)
BUT12AX
V CE (V)
003aaa454
003aaa455
1200
10
3
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