BC182_J35Z Fairchild Semiconductor, BC182_J35Z Datasheet
BC182_J35Z
Manufacturer Part Number
BC182_J35Z
Description
TRANS BIPO GP NPN 50V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BC182.pdf
(4 pages)
Specifications of BC182_J35Z
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2003 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
• Sourced from process 10.
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
V
Dynamic Characteristics
f
C
h
NF
C
Symbol
CBO
EBO
T
collector currents to 100mA.
FE
fe
J,
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
BE
ob
T
Symbol
(sat)
(on)
(sat)
STG
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Leakage Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Storage Junction Temperature Range
Parameter
T
C
=25°C unless otherwise noted
T
Parameter
C
- Continuous
=25°C unless otherwise noted
BC182
I
I
I
V
V
V
V
V
I
I
I
V
V
V
V
V
R
C
C
E
C
C
C
CB
EB
CE
CE
CE
CE
CE
CE
CE
CE
S
= 10µA, I
= 10µA, I
= 10mA, I
= 2mA, I
= 100mA, I
= 100mA, I
= 2KΩ, f = 1KHz
= 4V, I
= 50V, V
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 5V, I
= 5V, I
Test Condition
E
B
C
C
C
C
C
C
C
E
C
B
C
= 0
= 0
= 10µA
= 2mA
= 100mA
= 2mA
= 10mA, f = 100MHz
= 2mA, f = 1KHz
= 0.2mA
BE
= 0
= 0
B
B
= 0.5mA
= 0, f = 1MHz
= 5mA
= 5mA
= 0
1. Collector 2. Base 3. Emitter
1
0.55
- 55 ~ 150
Min.
120
150
125
50
60
40
80
6
Value
100
50
60
6
Typ.
TO-92
Max.
0.25
500
500
0.6
1.2
0.7
15
10
15
Rev. A, September 2005
5
Units
mA
°C
V
V
V
Units
MHz
nA
nA
pF
dB
V
V
V
V
V
V
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BC182_J35Z Summary of contents
Page 1
... BE V (on) Base-Emitter On Voltage BE Dynamic Characteristics f Current Gain Bandwidth Product T C Output Capacitance ob h Small Signal Current Gain fe NF Noise Figure ©2003 Fairchild Semiconductor Corporation BC182 T =25°C unless otherwise noted C Parameter - Continuous T =25°C unless otherwise noted C Test Condition I = 2mA 10µA, I ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation @T D Derate above 25°C R Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Case θJC ©2003 Fairchild Semiconductor Corporation T =25°C unless otherwise noted A Parameter =25°C A Max. Units 350 mW 2.8 mW/°C 357 mW/°C °C/W 125 Rev. A, September 2005 ...
Page 3
... Package Dimensions ±0.10 0.46 1.27TYP ±0.20 [1.27 ] ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 [1.27 ] ±0.20 3.60 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, September 2005 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...