TN3440A Fairchild Semiconductor, TN3440A Datasheet - Page 3

• Manufacturer Part Number: TN3440A
• Description: TRANS GP NPN 250V 100MA TO-226
• Manufacturer: Fairchild Semiconductor

Specifications of TN3440A

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 1W
• Frequency - Transition: 15MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
1000
100
5
1
0.1
10
800
600
400
200
1
1
25
0
1
Voltage vs Collector Current
V
Contours of Constant Gain
20 MHz
CB
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
Bandwidth Product (f )
= 225V
- 40 °C
I
T - AMBIENT TE MPE RATURE ( C)
I - COLLECTOR CURRENT (mA)
C
50
C
A
- COLLECTOR CURRENT (mA)
25 ° C
40 MHz
10
10
40 MHz
75
125 ° C
60 MHz
100
20 MHz
100
100
β = 10
(continued)
T
125
°
1000
1000
150
0.75
0.25
1000
1000
Capacitance vs Reverse Bias Voltage
0.5
800
600
400
200
800
600
400
200
100
80
60
40
20
10
1
0
0
0
NPN General Purpose Amplifier
0.1
1
Collector-Base / Emitter-Base
TO-226
Base-Emitter ON Voltage vs
25
I
Ambient Temperature
Power Dissipation vs
C
C , I = 0
- 40 °C
Collector Current
REVERSE BIAS VOLTAGE (V)
cb
- COLLECTOR CURRENT (mA)
E
TEMPERATURE ( C)
10
50
1
C , I = 8
25 °C
ib
125 °C
E
75
100
10
o
100
V
CE
= 5V
125
(continued)
1000
100
150