BU806 Fairchild Semiconductor, BU806 Datasheet
BU806
Manufacturer Part Number
BU806
Description
TRANSISTOR DARL NPN 200V TO-220
Manufacturer
Fairchild Semiconductor
Datasheet
1.BU807.pdf
(4 pages)
Specifications of BU806
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
1.5V @ 50mA, 5A
Current - Collector Cutoff (max)
100µA
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Other names
BU806
BU806FS
BU806FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU806
Manufacturer:
ST
Quantity:
20 000
©2000 Fairchild Semiconductor International
High Voltage & Fast Switching Darlington
Transistor
• Using In Horizontal Output Stages of 110 Crt Video Displays
• BUILT-IN SPEED-UP Diode Between Base and Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulsed: pulsed duration = 300 s, duty cycle = 1.5%
V
V
V
V
I
I
I
P
T
T
V
I
I
I
V
V
C
CP
B
CES
CEV
EBO
J
STG
F
CBO
CEO
EBO
C
CEO
CE
BE
Symbol
Symbol
(sat)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Damper Diode Forward Voltage
Collector Cut-off Current
Collector Cut-off Current
Parameter
: BU806
: BU807
: BU806
: BU807
: BU806
: BU807
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
BU806/807
: BU806
: BU807
: BU806
: BU807
I
I
V
V
V
V
V
C
I
C
I
F
C
CE
CE
CE
CE
BE
= 5A, I
= 4A
= 100mA, I
= 5A, I
= 6V, I
= 400V, V
= 330V, V
= 400V, V
= 330V, V
Test Condition
B
B
= 50mA
C
= 50mA
= 0
B
BE
BE
BE
BE
= 0
= 0
= 0
= -6V
= -6V
1.Base
1
- 55 ~150
2.Collector
Value
400
330
200
150
150
15
60
Min.
8
2
200
150
6
TO-220
Max.
100
100
100
100
1.5
2.4
3.Emitter
3
2
Rev. A, February 2000
Units
W
Units
V
V
V
V
V
A
A
A
C
C
mA
V
V
V
V
V
A
A
A
A
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BU806 Summary of contents
Page 1
... Damper Diode Forward Voltage F * Pulsed: pulsed duration = 300 s, duty cycle = 1.5% ©2000 Fairchild Semiconductor International BU806/807 T =25 C unless otherwise noted C Parameter : BU806 : BU807 : BU806 : BU807 = =25 C unless otherwise noted C Test Condition : BU806 I = 100mA BU807 : BU806 V = 400V BU807 V = 330V BU806 V = 400V BU807 V = 330V 6V ...
Page 2
... Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 100 I MAX. (Pulse MAX. (DC 0.1 0.01 0. Figure 4. Safe Operating Area 150 200 Ic = 100 (sat (sat 100 I [A], COLLECTOR CURRENT C 1ms 10us 100us BU806 BU807 0 100 1000 [V], COLLECTOR-EMITTER VOLTAGE Rev. A, February 2000 ...
Page 3
... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...