MPS6514 Fairchild Semiconductor, MPS6514 Datasheet
MPS6514
Manufacturer Part Number
MPS6514
Description
TRANSISTOR AMP NPN SS GP TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPS6514.pdf
(3 pages)
Specifications of MPS6514
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 2mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPS6514
Manufacturer:
FSC
Quantity:
28 000
Part Number:
MPS6514
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed as a general purpose
• The useful dynamic range extends to 100mA as a
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
Small Signal Characteristics
C
P
R
R
C
CBO
CBO
amplifier and switch.
switch and to 100MHz as an amplifier.
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
D
obo
Symbol
Symbol
, T
JC
JA
Symbol
stg
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
300 s, Duty Cycle
Parameter
2.0%
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
MPS6514
- Continuous
I
I
I
V
V
I
I
I
V
C
C
C
C
C
C
CE
CB
CB
= 0.5mA, I
=10 A, I
= 10 A, I
= 2.0mA, V
= 100mA, V
= 50mA, I
= 30V, I
= 30V, I
= 10V, I
Test Condition
E
C
E
E
B
E
B
= 0
= 0
CE
= 0
= 0, T = 100 C
= 5.0mA
= 0, f = 100kHz
CE
= 0
= 10V
= 10V
Max.
83.3
625
200
5.0
1. Emitter 2. Base 3. Collector
1
-55 ~ +150
Value
200
4.0
25
40
Min.
150
4.0
25
40
90
TO-92
Max.
300
1.0
0.5
3.5
50
mW/ C
Units
mW
C/W
C/W
Units
Rev. A, May 2004
mA
V
V
V
Units
C
nA
pF
V
V
V
V
A
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MPS6514 Summary of contents
Page 1
... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation MPS6514 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 0.5mA ...
Page 2
... Package Dimensions ©2004 Fairchild Semiconductor Corporation TO-92 Dimensions in Millimeters Rev. A, May 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ ...