PBHV9040Z,115 NXP Semiconductors, PBHV9040Z,115 Datasheet - Page 6

• Manufacturer Part Number: PBHV9040Z,115
• Description: TRANS PNP 0.25A 500V SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBHV9040Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 250mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 55MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 10V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 20mA, 100mA
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 400 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 250 mA
• Maximum Dc Collector Current: - 500 mA
• Power Dissipation: 700 mW
• Maximum Operating Frequency: 55 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061409115::PBHV9040Z T/R::PBHV9040Z T/R

NXP Semiconductors
PBHV9040Z_2
Product data sheet
Fig 4.
Fig 6.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
400
300
200
100
1.2
0.8
0.4
0
0
10
10
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 10 V
= 10 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
I
I
006aab182
006aab184
C
C
(mA)
(mA)
Rev. 02 — 15 January 2009
10
10
3
3
500 V, 0.25 A PNP high-voltage low V
Fig 5.
Fig 7.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
0.5
0.4
0.3
0.2
0.1
1.3
0.9
0.5
0.1
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
amb
amb
amb
amb
I
/I
1
B
B
(mA) = 140
= 5
= 25 C
= 55 C
= 25 C
= 100 C
112
84
56
42
28
14
1
1
126
98
70
10
2
(1)
(2)
(3)
PBHV9040Z
10
3
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
(BISS) transistor
4
006aab183
006aab185
V
3
I
C
CE
(mA)
(V)
10
5
4
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