PBHV9040Z,115 NXP Semiconductors, PBHV9040Z,115 Datasheet - Page 4

• Manufacturer Part Number: PBHV9040Z,115
• Description: TRANS PNP 0.25A 500V SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBHV9040Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 250mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 55MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 10V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 20mA, 100mA
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 400 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 250 mA
• Maximum Dc Collector Current: - 500 mA
• Power Dissipation: 700 mW
• Maximum Operating Frequency: 55 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061409115::PBHV9040Z T/R::PBHV9040Z T/R

NXP Semiconductors
6. Thermal characteristics
PBHV9040Z_2
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
1
3
2
1
10
3
2
1
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
duty cycle = 1
duty cycle = 1
0.75
0.33
0.1
0.02
0
5
0.75
0.33
0.1
0.02
0
5
0.05
0.01
0.05
0.01
0.5
0.2
0.5
0.2
10
10
4
4
Table 6.
[1]
[2]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
10
10
Thermal characteristics
3
3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
10
10
2
Rev. 02 — 15 January 2009
2
2
500 V, 0.25 A PNP high-voltage low V
10
10
1
1
Conditions
in free air
1
1
10
10
[1]
[2]
Min
-
-
-
PBHV9040Z
CEsat
10
10
2
2
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aab156
006aab157
(s)
(s)
Max
175
89
20
10
10
3
3
Unit
K/W
K/W
K/W
4 of 12
2
.