PBHV9040Z,115 NXP Semiconductors, PBHV9040Z,115 Datasheet - Page 5

• Manufacturer Part Number: PBHV9040Z,115
• Description: TRANS PNP 0.25A 500V SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBHV9040Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 250mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 55MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 10V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 20mA, 100mA
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 400 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 250 mA
• Maximum Dc Collector Current: - 500 mA
• Power Dissipation: 700 mW
• Maximum Operating Frequency: 55 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061409115::PBHV9040Z T/R::PBHV9040Z T/R

NXP Semiconductors
7. Characteristics
PBHV9040Z_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
I
h
V
V
f
C
C
t
t
t
t
t
t
CBO
CES
EBO
T
d
r
on
s
f
off
amb
FE
CEsat
BEsat
c
e
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequency
collector capacitance
emitter capacitance
delay time
rise time
turn-on time
storage time
fall time
turn-off time
p
300 s;
Rev. 02 — 15 January 2009
0.02.
500 V, 0.25 A PNP high-voltage low V
Conditions
V
V
T
V
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
V
f = 1 MHz
V
I
I
C
C
Bon
Boff
j
CB
CB
CE
EB
CE
CE
CB
EB
CC
I
I
I
= 150 C
= 100 mA; I
= 100 mA; I
C
C
C
= 0.03 A;
= 0.03 A
= 320 V; I
= 320 V; I
= 320 V; V
= 4 V; I
= 10 V
= 10 V; I
= 20 V; I
= 0.5 V; I
= 2 V; I
= 50 mA
= 100 mA
= 250 mA
C
C
E
E
= 0 A
C
= 0.15 A;
B
B
E
E
= 10 mA;
= i
BE
= i
= 0 A
= 0 A;
= 20 mA
= 20 mA
e
c
= 0 V
= 0 A;
= 0 A;
[1]
[1]
Min
-
-
-
-
100
80
10
-
-
-
-
-
-
-
-
-
-
-
PBHV9040Z
CEsat
Typ
-
-
-
-
200
200
25
55
7
150
9
1810
1819
715
1085
1800
110
1
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
-
-
-
-
-
-
-
-
-
-
-
-
100
10
100
100
200
1.1
Unit
nA
nA
nA
mV
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
5 of 12
A