PBHV9040Z,115 NXP Semiconductors, PBHV9040Z,115 Datasheet - Page 3

• Manufacturer Part Number: PBHV9040Z,115
• Description: TRANS PNP 0.25A 500V SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBHV9040Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 250mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 55MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 10V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 20mA, 100mA
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 400 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 250 mA
• Maximum Dc Collector Current: - 500 mA
• Power Dissipation: 700 mW
• Maximum Operating Frequency: 55 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061409115::PBHV9040Z T/R::PBHV9040Z T/R

NXP Semiconductors
5. Limiting values
PBHV9040Z_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
V
V
V
V
I
I
I
P
T
T
T
C
CM
BM
Fig 1.
j
amb
stg
CBO
CEO
CESM
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
collector-emitter peak
voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
(mW)
P
Rev. 02 — 15 January 2009
1600
1200
tot
800
400
0
75
500 V, 0.25 A PNP high-voltage low V
25
(1)
(2)
Conditions
open emitter
open base
V
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
25
BE
1 ms
1 ms
= 0 V
2
25 C
75
125
T
006aab155
amb
[1]
[2]
( C)
175
Min
-
-
-
-
-
-
-
-
55
65
PBHV9040Z
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
0.7
1.4
150
+150
+150
500
400
500
6
0.25
0.5
200
Unit
V
V
V
V
A
A
mA
W
W
C
C
C
3 of 12
2
.