TIP142T Fairchild Semiconductor, TIP142T Datasheet - Page 3

• Manufacturer Part Number: TIP142T
• Description: TRANS DARL NPN 100V 10A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of TIP142T

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 10A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 5A, 4V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 10 A
• Maximum Collector Cut-off Current: 1000 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TIP142TFS

TIP140T / TIP141T / TIP142T Rev. B2
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 3. Collector-Emitter Saturation Voltage
100
Base-Emitter Saturation Voltage
0.1
10
0.01
1
Figure 1. Static Characteristic
Figure 5. Safe Operating Area
10
0.1
10
1
9
8
7
6
5
4
3
2
1
0
1
0.1
0
I
I
I
I
B
B
B
B
= 2000uA
= 1800uA
= 1600uA
= 1400uA
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
1
[V], COLLECTOR-EMITTER VOLTAGE
I
C
V
[A], COLLECTOR CURRENT
BE
V
10
(sat)
CE
(sat)
1
TIP140T
TIP141T
TIP142T
2
3
100
10
I
I
I
B
B
4
B
= 400uA
= 200uA
I
= 800uA
I
C
B
=500I
= 600uA
B
1000
100
5
3
Figure 4. Collector Output Capacitance
100k
1000
10k
100
100
1k
10
10
100
80
60
40
20
0.1
1
0
0
Figure 2. DC current Gain
Figure 6. Power Derating
V
CB
25
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
T
50
C
[
10
o
1
C], CASE TEMPERATURE
75
100
10
100
125
V
f=0.1MHz
CE
150
= 4V
www.fairchildsemi.com
100
1000
175