2N3415 Fairchild Semiconductor, 2N3415 Datasheet - Page 2

• Manufacturer Part Number: 2N3415
• Description: TRANSISTOR NPN 25V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N3415

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 3mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2mA, 4.5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 180
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

OFF CHARACTERISTICS
V
V
V
I
I
ON CHARACTERISTICS*
h
V
V
h
SMALL SIGNAL CHARACTERISTICS
Symbol
CBO
EBO
FE
fe
*
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
Electrical Characteristics
Pulse Test: Pulse Width
sat
sat
)
)
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small-Signal Current Gain
300 s, Duty Cycle 2.0%
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
V
V
I
I
I
f = 1.0 kHz
C
C
E
C
C
C
CB
CB
EB
CE
= 10 mA, I
= 10 A, I
= 10 A, I
= 50 mA, I
= 50 mA, I
= 2.0 mA, V
= 5.0 V, I
= 25 V, I
= 25 V, I
= 4.5 V, I
Test Conditions
E
C
B
E
E
B
B
C
C
= 0
= 0
CE
= 0
= 0
= 0, T
= 3.0 mA
= 3.0 mA
= 0
= 2.0 mA
NPN General Purpose Amplifier
= 4.5 V,
A
= 100 C
Min
180
180
5.0
0.6
25
25
Max
540
0.1
0.1
0.3
1.3
15
(continued)
Units
V
V
V
V
V
A
A
A