BD243C Fairchild Semiconductor, BD243C Datasheet - Page 2

• Manufacturer Part Number: BD243C
• Description: TRANSISTOR NPN 100V 6A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of BD243C

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 6A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 3A, 4V
• Power - Max: 65W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 6 A
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
Figure 3. Collector-Emitter Saturation Voltage
0.01
1000
0.1
100
1
10
0.1
80
70
60
50
40
30
20
10
0.01
0
0
25
Figure 1. DC current Gain
Figure 5. Power Derating
I
C
I
C
[A], COLLECTOR CURRENT
50
[A], COLLECTOR CURRENT
T[
o
0.1
C], CASE TEMPERATURE
75
100
1
125
1
I
C
= 10.1 I
150
V
B
CE
175
= 2V
10
200
10
Figure 2. Base-Emitter Saturation Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
100
0.1
10
0.1
1
1
Figure 4. Safe Operating Area
I
V
C
(max)
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
1
10
BD243
BD243A
BD243B
BD243C
I
C
100
10
= 10.1 I
100 s
10 s
Rev. A, February 2000
B