TIP29 Fairchild Semiconductor, TIP29 Datasheet - Page 3

• Manufacturer Part Number: TIP29
• Description: TRANS GP NPN 1A 40V TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of TIP29

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 125mA, 1A
• Current - Collector Cutoff (max): 300µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 1A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Frequency: 3 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TIP29/TIP29A/TIP29B/TIP29C Rev. A
© 2008 Fairchild Semiconductor Corporation
Typical Characteristics
1000
0.1
100
10
10
1
1
1
I
I
C
C
(MAX) (PULSE)
(MAX) (DC)
Figure 3. Safe Operating Area
V
CE
Figure 1. DC current Gain
TIP29A V
TIP29B V
TIP29C V
TIP29 V
[V], COLLECTOR-EMITTER VOLTAGE
10
I
C
10
[mA], COLLECTOR CURRENT
CEO
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
DC
100
100
1000
V
CE
= 4V
10000
3
Figure 2. Base-Emitter Saturation Voltage
10000
1000
40
35
30
25
20
15
10
100
5
0
10
Collector-Emitter Saturation Voltage
0
1
25
Figure 4. Power Derating
V
V
CE
BE
I
50
C
(sat)
(sat)
10
[mA], COLLECTOR CURRENT
T
C
[
o
C], CASE TEMPERATURE
75
100
100
125
150
1000
I
175
C
/I
www.fairchildsemi.com
B
= 10
200
10000