FZT790A Fairchild Semiconductor, FZT790A Datasheet
FZT790A
Manufacturer Part Number
FZT790A
Description
TRANSISTOR NPN 40V 3A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.FZT790A.pdf
(4 pages)
Specifications of FZT790A
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 10mA, 2V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
50V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
300
Power Dissipation
2W
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
300
Maximum Operating Frequency
100 MHz
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
FZT790AFS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZT790A
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FZT790ATA
Manufacturer:
Diodes/Zetex
Quantity:
36 476
Part Number:
FZT790ATA
Manufacturer:
ZETEX
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
PNP Low Saturation Transistor
• These devices are designed with high current gain and low saturation
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle
Thermal Characteristics
V
V
V
I
T
Off Characteristics
BV
BV
BV
I
I
On Characteristics *
h
V
V
V
Small Signal Characteristics
f
P
R
C
CBO
EBO
T
voltage with collector currents up to 3A continuous.
FE
J
CEO
CBO
EBO
CE(sat)
BE(sat)
BE(on)
D
, T
Symbol
JA
CEO
CBO
EBO
Symbol
Symbol
STG
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Parameter
2.0%
T
A
=25 C unless otherwise noted
Parameter
Parameter
- Continuous
T
C
=25 C unless otherwise noted
FZT790A
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
f = 50MHz
C
C
E
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
= -100 A, I
= -10mA, I
= -100 A, I
= -500mA, I
= -1.0A, I
= -2.0A, I
= -1.0A, I
= -1.0A, V
= -50mA, V
= -4V, I
= -30V, I
= -30V, I
= -2.0V, I
= -2.0V, I
= -2.0V, I
= -2.0V, I
Test Conditions
C
B
B
B
CE
B
E
E
C
= 0
= -10mA
= -50mA
= -10mA
E
C
C
C
C
CE
B
= 0
= 0, T
= 0
= 0
= 0
= -10mA
= -500mA
= -1.0A
= -2.0A
= -2.0V
= -5.0mA
= -5.0V,
A
= 100 C
1. Base 2.4. Collector 3. Emitter
- 55 ~ +150
Max.
4
62.5
2
Value
-40
-50
-5
-3
Min.
-5.0
300
250
200
150
100
-40
-50
1
-0.25
-0.45
-0.75
Max.
-100
-100
-1.0
-1.0
800
-10
SOT-223
2
Units
Rev. B, November 2002
C/W
W
3
Units
V
V
V
A
Units
MHz
C
mV
nA
nA
V
V
V
V
V
A
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FZT790A Summary of contents
Page 1
... Small Signal Characteristics f Transition Frequency T * Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation FZT790A T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted A Test Conditions I = -10mA ...
Page 2
... I - COLLECTOR CURRENT (A) C Figure 5. Current Gain vs Collector Current ©2002 Fairchild Semiconductor Corporation 1 2.0V ce 1.4 1.2 1 0.8 0.6 0.4 0.2 0.0001 1 10 Figure 2. Base-Emitter On Voltage 400 350 300 125°C 250 25° ...
Page 3
... Package Dimensions (0.95) ©2002 Fairchild Semiconductor Corporation SOT-223 3.00 0.10 MAX1.80 2.30 TYP 0.70 0.10 (0.95) 4.60 0.25 0.25 6.50 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters Rev. B, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...