PZTA29 Fairchild Semiconductor, PZTA29 Datasheet
PZTA29
Manufacturer Part Number
PZTA29
Description
TRANSISTOR DARL NPN SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.PZTA29.pdf
(4 pages)
Specifications of PZTA29
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (max)
500nA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PZTA29
Manufacturer:
INFINEON
Quantity:
30
©2005 Fairchild Semiconductor Corporation
PZTA29 Rev. A
PZTA29
NPN Darlington Transistor
• This device designed for applications requiring extremely high
• Sourced from process 03.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
V
I
I
I
On Characteristics
h
V
V
Small Signal characteristics
f
C
C
CBO
CES
EBO
T
FE
J
CES
CBO
EBO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
BE(on)
obo
current gain at collector currents to 500mA.
Symbol
Symbol
, T
STG
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
- Continuous
Parameter
T
a
= 25°C unless otherwise noted
T
a
1. Base 2.4. Collector 3. Emitter
= 25 C unless otherwise noted
4
I
I
I
V
V
V
V
V
I
I
I
I
V
C
C
E
C
C
C
C
CB
CE
EB
CE
CE
CB
= 10 A, I
= 100 A, V
= 100 A, I
= 10mA, I
= 100mA, I
= 100mA, V
= 10mA, V
= 10V, I
= 80V, I
= 80V, V
= 5.0V, I
= 5.0V, I
= 1.0V, I
1
1
SOT-223
C
Conditions
2
E
C
B
E
C
C
E
BE
CE
B
= 0
BE
= 0
= 0
= 0.01mA
CE
= 0
= 0, f = 1.0MHz
= 10mA
= 100mA
= 0.1mA
= 0
3
= 5.0V, f = 100MHz
= 0
= 5.0V
-55 to +150
Value
100
100
800
12
10,000
10,000
Min.
100
100
125
12
Max
100
500
100
1.2
1.5
2.0
8.0
www.fairchildsemi.com
Units
mA
V
V
V
C
Units
MHz
nA
nA
nA
pF
V
V
V
V
V
V
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PZTA29 Summary of contents
Page 1
... Base-Emitter On Voltage BE(on) Small Signal characteristics f Current Gain Bandwidth Product T C Output Capacitance obo * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% ©2005 Fairchild Semiconductor Corporation PZTA29 Rev SOT-223 1 1. Base 2.4. Collector 3. Emitter unless otherwise noted a Parameter - Continuous T = 25°C unless otherwise noted ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4PCB 36mm 18mm PZTA29 Rev 25°C unless otherwise noted a Parameter 2 1.5mm; mounting pad for the collector lead min. 6cm 2 Max. Units 1,000 mW 8.0 mW/ C 125 C/W www.fairchildsemi.com ...
Page 3
... Mechanical Dimensions PZTA29 Rev. A SOT-223 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete PZTA29 Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...