BCP53 Fairchild Semiconductor, BCP53 Datasheet
BCP53
Manufacturer Part Number
BCP53
Description
TRANSISTOR PNP 80V 1.2A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCP53.pdf
(3 pages)
Specifications of BCP53
Transistor Type
PNP
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1.2 A
Maximum Dc Collector Current
1.2 A
Power Dissipation
1.5 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1.2A
Dc Current Gain (min)
25
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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Manufacturer
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Price
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1997 Fairchild Semiconductor Corporation
P
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
PNP General Purpose Amplifier
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
, T
JA
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
SOT-223
C
BCP53
Characteristic
B
Parameter
C
E
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
BCP53
Max
83.3
1.5
12
-55 to +150
Value
100
5.0
1.2
80
Units
mW/ C
Units
C/W
V
V
V
A
C
W
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BCP53 Summary of contents
Page 1
... Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 80 V 100 V 5.0 V 1.2 A -55 to +150 C Max Units BCP53 1 mW/ C 83.3 C/W ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...