TN6715A Fairchild Semiconductor, TN6715A Datasheet - Page 3

• Manufacturer Part Number: TN6715A
• Description: TRANS GP NPN 40V 1.5A TO-226
• Manufacturer: Fairchild Semiconductor

Specifications of TN6715A

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 1A, 1V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1.5 A
• Maximum Dc Collector Current: 1.5 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
500
400
300
200
100
100
1.2
0.8
0.6
0.4
0.2
0.1
10
0
1
1
25
1
1
Voltage vs Collector Current
V
CE
V = 40V
Base-Emitter Saturation
= 10
CB
Gain Bandwidth Product
vs Ambient Temperature
Collector-Cutoff Current
= 10V
I
- 40 °C
C
T - AMBIENT TE MPE RATURE ( C)
vs Collector Current
I - COLLECTOR CURRENT (mA)
50
C
A
- COLLECTOR CURRENT ( mA)
10
10
75
25°C
100
100
100
125 °
(continued)
125
C
°
1000
1000
150
0.8
0.6
0.4
0.2
0.01
Safe Operating Area TO-226 / SOT-223
0.001
0.1
1
40
30
20
10
10
0
1
NPN General Purpose Amplifier
0
1
OPERATION
T
Base-Emitter ON Voltage vs
Collector-Base Capacitance
*PULSED
A
V
vs Collector-Base Voltage
V
- 40 °C
4
= 25 °C
CB
CE
I
- COLLECTOR-EMITTER VOLTAGE (V)
- COLLECTOR-BASE VOLTAGE (V)
C
Collector Current
- COLLE CTOR CURRENT (A)
8
LIMIT DETERMINED
0.01
25°C
12
BY BV
125 °
10
16
CEO
C
20
0.1
V
CE
24
= 5V
(continued)
28
100
1