PZTA64 Fairchild Semiconductor, PZTA64 Datasheet - Page 2

• Manufacturer Part Number: PZTA64
• Description: TRANSISTOR GP PNP 30V SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of PZTA64

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 1.2A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Collector-base Voltage: 30V
• Emitter-base Voltage: 10V
• Dc Current Gain: 10000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
I
I
h
V
V
f
Symbol
CBO
EBO
T
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
FE
(BR)CES
CE(
BE(
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Typical Characteristics
on
sat
50
40
30
20
10
)
)
0
0.01
Typical Pulsed Current Gain
V
CE
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
= 5V
- 40 °C
vs Collector Current
I - COLLECTOR CURRENT (A)
C
25 °C
125 °C
Parameter
0.1
TA = 25°C unless otherwise noted
I
V
V
I
I
I
I
I
f = 100 MHz
1
C
C
C
C
C
C
CB
EB
= 100 A, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 10 mA, V
= 30 V, I
= 10 V, I
Test Conditions
E
C
1.6
1.2
0.8
0.4
B
CE
CE
0.001
B
0
= 0
= 0
CE
CE
= 0
= 0.1 mA
= 5.0 V
= 5.0 V,
= 5.0 V
= 5.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 1000
- 40 °C
PNP Darlington Transistor
I - COLLECTOR CURRENT (A)
C
0.01
25 °C
10,000
20,000
Min
125
30
0.1
Max
125 °C
100
100
1.5
2.0
(continued)
Units
MHz
nA
nA
V
V
V
1
3