PZT2222A Fairchild Semiconductor, PZT2222A Datasheet - Page 2

• Manufacturer Part Number: PZT2222A
• Description: TRANS AMP NPN GP 40V .5A SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of PZT2222A

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1W
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1000 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: PZT2222ATR

PN2222A / MMBT2222A / PZT2222A Rev. A3
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Off Characteristics
On Characteristics
Small Signal Characteristics
Switching Characteristics
BV
BV
BV
Symbol
V
V
Re(h
rb’C
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
I
C
h
CBO
CEX
EBO
NF
I
BL
f
t
obo
t
FE
t
t
ibo
T
d
s
r
f
ie
c
)
Collector-Emitter Breakdown Voltage * I
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter
High Frequency Input Impedance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
T
a
= 25°C unless otherwise noted
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
R
I
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CB
CB
EB
CE
CB
EB
CC
CC
S
= 10mA, I
= 10μA, I
= 10μA, I
= 0.1mA, V
= 1.0mA, V
= 10mA, V
= 10mA, V
= 150mA, V
= 150mA, V
= 500mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 20mA, V
= 100μA, V
= 20mA, V
= 150mA, I
= 1.0KΩ, f = 1.0KHz
= I
2
= 3.0V, I
= 0.5V, I
= 60V, V
= 60V, I
= 60V, I
= 60V, V
= 10V, I
= 30V, V
= 30V, I
B2
= 15mA
Test Condition
C
E
B
E
E
E
C
C
C
EB(off)
EB(off)
CE
CE
CE
CB
CE
EB(off)
= 0
= 0
B
B
B
B
B1
CE
CE
CE
= 0
= 0
= 0, T
= 0, f = 1MHz
CE
CE
CE
= 150mA,
= 0
= 0, f = 1MHz
= 15mA
= 50mA
= 15mA
= 50mA
= 10V
= 10V, T
= 20V, f = 100MHz
= 20V, f = 31.8MHz
= 20V, f = 300MHz
= 15mA
= 10V
= 10V
= 10V,
= 10V *
= 1V *
= 10V *
= 3.0V
= 3.0V
= 0.5V,
a
= 125°C
a
= -55°C
Min.
100
300
6.0
0.6
40
75
35
50
75
35
50
40
Max.
0.01
300
150
225
0.3
1.0
1.2
2.0
8.0
4.0
10
10
10
20
25
60
10
25
60
www.fairchildsemi.com
Units
MHz
nA
μA
μA
nA
nA
pF
pF
pS
dB
ns
ns
ns
ns
V
V
V
V
V
V
V
Ω