FSB660A Fairchild Semiconductor, FSB660A Datasheet
FSB660A
Manufacturer Part Number
FSB660A
Description
TRANSISTOR PNP 60V 2A SSOT-3
Manufacturer
Fairchild Semiconductor
Datasheet
1.FSB660A.pdf
(4 pages)
Specifications of FSB660A
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
300mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 500mA, 2V
Power - Max
500mW
Frequency - Transition
75MHz
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
2 A
Maximum Dc Collector Current
2 A
Power Dissipation
0.5 W
Maximum Operating Frequency
75 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FSB660A
Manufacturer:
FAIRCHILD
Quantity:
2 800
Company:
Part Number:
FSB660A
Manufacturer:
RICHTEK
Quantity:
54 000
Part Number:
FSB660A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FSB660A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Symbol
V
V
V
I
T
Absolute Maximum Ratings*
P
R
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
C
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
J,
CEO
CBO
EBO
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
Symbol
D
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
JA
T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
SuperSOT
FSB660 / FSB660A
C
Parameter
TM
-3 (SOT-23)
Characteristic
B
T
A = 25°C unless otherwise noted
E
T
A = 25°C unless otherwise noted
FSB660/FSB660A
-55 to +150
FSB660/FSB660A
60
60
5
2
Max
500
250
FSB660/FSB660A Rev. B1
Units
Units
°C/W
°C
mW
V
V
V
A
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FSB660A Summary of contents
Page 1
... FSB660 / FSB660A C TM SuperSOT PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents continuous. Absolute Maximum Ratings* Symbol Parameter Collector-Emitter Voltage V CEO Collector-Base Voltage V CBO Emitter-Base Voltage V EBO Collector Current - Continuous ...
Page 2
... Duty Cycle 25°C unless otherwise noted Test Conditions 100 100 =100° 100 mA =500mA, V =2V FSB660 100 =200 mA FSB660 100 1MHz 100 mA 2.0% Min Max 100 10 100 100 300 250 550 FSB660A 80 40 300 350 FSB660A 300 1. f=100MHz FSB660/FSB660A Rev. B1 Units ...
Page 3
... Input/Output Capacitance vs. Reverse Bias Voltage 400 350 300 125°C 250 25°C 200 150 - 40°C 100 0 2.0V ce 125°C 25°C - 40°C 0.001 0.01 0 COLLECTOR CURRENT (A) C Collector Current - 40°C 25°C 125°C 0.01 0 1.0MHz obo C ibo 0 100 - COLLECTOR VOLTAGE ( FSB660/FSB660A Rev. B1 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...