MMBTA28 Fairchild Semiconductor, MMBTA28 Datasheet - Page 3

• Manufacturer Part Number: MMBTA28
• Description: TRANSISTOR DARL NPN SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA28

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.8 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
400
300
200
100
0.01
1.6
1.2
0.8
0.4
100
0
0.1
10
2
0
1
1
1
25
V
V
Voltage vs Collector Current
CB
ce
= 1000
Gain Bandwidth Product
vs Ambient Temperature
- 40 °C
Collector-Cutoff Current
Base-Emitter Saturation
= 80V
= 5V
I - COLLECTOR CURRENT (mA)
vs Collector Current
C
I - COLLECTOR CURRE NT (mA)
T - AMBIE NT TEMP ERATURE ( C)
C
A
50
10
10
25 °C
75
20
100
(continued)
100
50
125 °C
°
100 150200
200 300
1000
125
114.2
113.8
113.6
113.4
113.2
112.8
1.6
1.2
0.8
0.4
20
15
10
114
113
5
2
2
0
0.1
1
0.1
V = 5V
Collector-Emitter Breakdown
CE
Input and Output Capacitance
Base Emitter ON Voltage vs
Voltage with Resistance
Between Emitter-Base
- 40 °C
NPN Darlington Transistor
I - COLLECTOR CURRE NT (mA)
C
vs Reverse Voltage
Collector Current
V
CE
1
10
- COLLECTOR VOLTAGE(V)
RESISTANCE (k
1
25 °C
10
100
125 °C
MPSA28/MMBTA28/PZTA28, Rev A
10
)
100
f = 1.0 MHz
C
ib
(continued)
C
1000
1000
ob
100